Перегляд за автором "Stanetska, A.S."

Сортувати за: Порядок: Результатів:

  • Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition 
    Levchenko, I.V.; Tomashyk, V.M.; Stratiychuk, I.B.; Malanych, G.P.; Stanetska, A.S.; Korchovyi, A.A. (Functional Materials, 2018)
    The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant ...
  • Chemical polishing of InAs, InSb, GaAs and GaSb 
    Levchenko, I.V.; Tomashyk, V.M.; Stratiychuk, I.B.; Malanych, G.P.; Stanetska, A.S.; Korchovyi, A.A. (Functional Materials, 2017)
    The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and ...